Related products
Infineon Technologies CoolSiC™ Trench Power MOSFETs
Silicon Carbide MOSFETs offering reliable and cost-effective performance in discrete packages: TO-247-3/4 pin and TO-253-7 package.
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| IMBF170R1K0M1XTMA1 | CoolSiC™ MOSFET 1700 V in TO263-7 package |
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| IMW120R140M1HXKSA1 | CoolSiC™ MOSFET 1200 V in TO247-3 package | PG-TO247-3 |
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| IMZA65R072M1HXKSA1 | CoolSiC™ MOSFET 650 V in TO247-4 package |
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| IMW65R027M1HXKSA1 | CoolSiC™ MOSFET 650 V in TO247-3 package | PG-TO247-3 |
650.0 V |
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| IMZ120R030M1HXKSA1 | CoolSiC™ MOSFET 1200 V in TO247-4 package | PG-TO247-4 |
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EV Charging |
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| IMZA65R048M1HXKSA1 | CoolSiC™ MOSFET 650 V in TO247-4 package | PG-TO247-4 | 650.0 V |
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| AIMW120R045M1XKSA1 | CoolSiC™ Automotive MOSFET 1200 V in TO247-3 package |
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Infineon Technologies CoolSiC™ Trench Power MOSFETs modules
1200 V Silicon Carbide MOSFET power modules in Easy and 62mm housing open up new opportunities for inverter designers to realize efficiency and power density.
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| FF3MR12KM1HOSA1 | CoolSiC™ MOSFET 62mm module 1200 V in halfbridge configuration |
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| FF2MR12KM1HOSA1 | CoolSiC™ MOSFET 62mm module 1200 V in halfbridge configuration |
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| FS45MR12W1M1B11BOMA1 | EasyPACK™ CoolSiC™ MOSFET module 1200 V in sixpack configuration |
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| F3L15MR12W2M1B69BOMA1 | EasyPACK™ CoolSiC™ MOSFET module 1200 V in 3-level configuration |
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| F423MR12W1M1B11BOMA1 | EasyPACK™ CoolSiC™ MOSFET module 1200 V in fourpack configuration |
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| FF08MR12W1MA1B11ABPSA1 | EasyPACK™ CoolSiC™ Automotive MOSFET module 1200 V in halfbridge configuration |
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1200 V |
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Infineon Technologies CoolSiC™ hybrid modules
Combination of an IGBT chip and a CoolSiC™ Schottky Diode to further extend the capability of IGBT technology.
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| F3L400R10W3S7FB11BPSA1 | EasyPACK™ CoolSiC™ Schottky diode and TRENCHSTOP™ IGBT7 in 3-level configuration |
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Solar | |
| FS3L200R10W3S7FB11BPSA1 | EasyPACK™ CoolSiC™ Schottky diode and TRENCHSTOP™ IGBT7 in 3-level configuration |
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| FS3L30R07W2H3FB11BPSA2 | EasyPACK™ CoolSiC™ Schottky diode and High Speed IGBT H3 |
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Infineon Technologies CoolSiC™ Schottky Diodes
600 V, 650 V and 1200 V Silicon Carbide Schottky Diode provide a relatively high on-state resistance and leakage current.
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| IDK02G120C5XTMA1 | CoolSiC™ Schottky diode 1200 V G5 in D²PAK real 2-pin package |
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| IDDD04G65C6XTMA1 | CoolSiC™ Schottky diode 650 V G6 in Double DPAK |
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| IDK08G65C5XTMA2 | CoolSiC™ Schottky diode 600 V G5 in DPAK real 2-pin package |
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| IDWD10G120C5XKSA1 | CoolSiC™ Schottky diode 1200 V G5 in TO247-2 package |
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Buy online |
| IDK16G120C5XTMA1 | CoolSiC™ Schottky diode 1200 V G5 in D²PAK real 2-pin package |
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Available soon |
| IDWD40G120C5XKSA1 | CoolSiC™ Schottky diode 1200 V G5 in TO247-2 package |
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1200.0 V |
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Infineon Technologies EiceDRIVER™ gate driver ICs
Ultra-fast CoolSiC™ MOSFETs typically are best driven by gate-driver ICs with integrated galvanic isolation.
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| 2EDF9275FXUMA1 | 650 V EiceDRIVER™ functional isolated gate driver IC |
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| 2EDS9265HXUMA1 | 650 V EiceDRIVER™ reinforced isolated gate driver IC |
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| 2ED020I12F2XUMA1 | 1200 V dual high side EiceDRIVER™ gate driver IC with galvanic isolation, DESAT and short circuit clamping |
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| 1ED3431MU12M | 5.7 kV EiceDRIVER™ Enhanced isolated gate driver IC with active Miller clamp, adjustable DESAT and soft-off |
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Available soon |
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