onsemi’s Standard Products combine complementary integrated circuits with protection and signal discretes to shrink designs, harden interfaces, and deliver efficient, reliable performance for automotive, industrial, and consumer systems. Alongside LDOs, amplifiers, logic, EEPROMs, and isolation, the portfolio covers Zeners, ESD/surge, Schottky and standard rectifiers, BJTs/BRTs, JFETs, CCRs, Darlingtons, RF discretes, and EMI filters, with miniaturized options down to ~0.62 × 0.32 mm² and ~1.0 × 0.6 mm² packages, low‑clamping ESD arrays with guaranteed max insertion‑loss options, and Schottkys tuned for Vf/IF—including an industry‑first ~500 mA / 30 V 01005‑class option.
Engineers combine these devices to move faster with fewer parts: BRTs integrate biasing (17 resistor combinations), CCRs provide fixed‑current LED drive with no EMI from switching, low‑Miller JFETs keep RF amplifiers stable, and EMI filter arrays add high attenuation with excellent clamping across single‑ended lines. With more than 6,000 part numbers across over 170 packages, enabled by the Treo Platform, programs standardize on interoperable building blocks that simplify procurement while meeting efficiency, robustness, and interface‑protection targets across vehicles, factories, and consumer electronics.
Transistors
onsemi transistor families—BJTs, BRTs, JFETs, and Darlingtons—span ~10–800 V with >10 A options, low VCE(sat), strong hFE, and high ESD toleranceto deliver efficient drive and robust switching across automotive, industrial,and consumer systems. Integrated‑bias BRTs (17 resistor combinations insingles and duals) cut BOM and area; low‑Miller JFETs (~10–40 V) stabilizeRF amps, and NPN/PNP Darlingtons (~30–400 V, Ic ~0.3–50 A, gain to~30,000) simplify drive—making BJTs a cost‑effective MOSFET alternative atthe right operating points, with the Treo Platform accelerating selection anddesign cycles.
Transistors: Portfolios
BJTs
- 10 V to 800 V
- Packages as small as 1.0 x 0.6 mm2
- Audio and Power devices handle > 10 A
- Low VCE Sat devices available
- Cost effective alternative to MOSFETS
- RDSON Eq of 30 mΩ
- High ESD Tolerance
BRTs
- BJT with Integrated Biasing Resistors
- Save cost and board space
- 17 different resistor combinations
- Singles & Duals
- Over 350 options available!
JFETs
- 10 V to 40 V
- Packages as small as 1.0 x 0.6 mm2
- Low Miller Capacitance
- Selected devices optimized for usage on RF Amplifiers
- More than 50 devices to choose from
Portfolio Highlights
| Category | Description | BUY NOW |
|---|---|---|
| BRTs / Digital Transistors | Integrated-bias digital transistors (BRTs) combining bias resistors in singles and duals, reducing BOM and board space for efficient switching in automotive and industrial designs. | |
| BJTs (General Purpose) | Broad portfolio of bipolar junction transistors with balanced gain, low noise, and reliability for diverse analog switching and amplification tasks across multiple applications | |
| Power BJTs | High current and voltage BJTs designed for robust power switching and amplification up to 800 V and >10 A, suitable for industrial, automotive, and consumer power control. | |
| Low Vcesat BJTs | BJTs specifically engineered for low collector-emitter saturation voltage, improving efficiency and thermal performance in switching and amplification circuits. | |
| JFETs | Low-Miller capacitance JFETs (approx. 10–40 V) for stable RF amplifier designs and noise-sensitive analog front ends in demanding environments. | |
| MMICs, RF Transistors | RF transistors and Monolithic Microwave ICs (MMICs) designed for high-frequency signal amplification and RF communication applications. | |
| All Transistors | Complete onsemi transistor portfolio including BJTs, BRTs, JFETs, Darlingtons, and RF transistors, supported by Treo platform tools for efficient selection and design. | BUY NOW |
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