SiC Junction Field-Effect Transistor (JFET) is a compelling technology for fast growing markets positioned to gain share from Silicon based super-junction (SJ) MOSFETs and other semiconductor solutions such as GAN in the industrial end-market. All these devices are optimized for use in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks.
In addition, they improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units. Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).
onsemi SiC JFETs
High-performance, normally-on JFET transistors with VDS-max ranging from 650V to 1700V. They provide high switching frequency and deliver ultra-low on-resistance (RDS (on)) starting at just 4 mohm, utilizing less than half the die size of any other technology. Additionally low gate charge (Qg) enables further reductions in both conduction and switching losses. SiC JFETs are optimized for one of the uses in Power Supply Units (PSUs) and downstream high-voltage DC-DC conversion to handle the enormous power requirements of future AI Data Center Racks. In addition, they improve efficiency and safety by replacing multiple components with a solid-state switch based on SiC JFETs in EV battery disconnect units. Furthermore, they enable certain Energy Storage topologies and Solid-State Circuit Breakers (SSCBs).
onsemi SiC cascode JFETs
Best-in-class switching speed, lower switching losses, and higher efficiency. Available in both standard thru-hole (including Kelvin) and surface mount packages, they offer excellent cost-effectiveness. These devices utilize a unique cascode configuration, integrating a high-performance SiC fast JFET with a cascode-optimized Si-MOSFET. This innovative approach enables standard gate drive (0-12V) for SiC devices. Given their smaller die size and compatibility with existing driver solutions, the SiC cascode JFETs offer optimized system performance and cost structure.
onsemi SiC combo-FETs
Combining our low RDS(on) SiC JFET with a Si MOSFET in a single, compact package. Specifically designed for low-frequency protection applications, these combo-FETs allow users to access the JFET gate for optimized design.
onsemi Addresses Design Trends
| Design trend | onsemi address this trend | |||
|---|---|---|---|---|
|
✔ Ultra - Fast Response Time |
SiC JFETs SiC Combo JFETs SiC Cascode JFETs |
650 V – 1700 V |
16 A – 588 A |
from 4.3 mΩ |
| SiC MOSFETs | 650 V – 1700 V | 4.2 A – 163 A | from 12.0 mΩ | |
| ✔ Safety ✔ Compact and Lightweight |
Gate Drivers |
Galvanic Isolated Junction Isolated Non-Isolated |
capable to drive all required portfolio of transistors (Si MOSFETs, SiC MOSFETs, SiC JFETs) |
|
| ✔ Safety | GFCI Controllers | NCS37021, and variety of GFCI compliant devices that detect hazardous current paths to ground and ground to neutral faults. | ||
SiC JFETs are well positioned to gain share from silicon based SJ MOSFETs and other semiconductor solutions in the industrial end market.
Many other onsemi devices covering up to 90% of the Semiconductor’s BOM.
System Solution for Easy Integration – SiC JFETs
SiC JFETs, SiC Cascode JFETs, SiC Combo JFETs
onsemi EliteSiC Solutions
EliteSiC provides greater control over power conversion, covering AC-DC, DC-AC and DC-DC. Thanks to its unique features, EliteSiC delivers higher levels of efficiency.
Simulation tools
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