EBV - Nexperia - GaN FETs (HB)

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Nexperia GaN FETs

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Nexperia GaN FETs

 

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Optimized balance of voltage and power

Delivering optimum flexibility in power systems, Nexperia e-mode GaN FETs are ideal for either low-power 650 V applications or high-power 150 V applications. Offering superior switching performance due very low QC and QOSS values, they bring improved efficiency to 650 V AC/DC and DC/AC power conversion. Alternatively low-voltage GaN (150 V) devices enable faster charging for e-mobility and wired / wireless changing systems as well as significant space and BOM savings in LiDAR and lower noise in Class D audio amplifiers.
 

Resources

 

Key features

  • Enhancement mode transistor-normally off power switch​
  • Ultra-high switching frequency​
  • Leading soft-switching performance​
  • No reverse-recovery charge​
  • Low gate charge, low output charge​
  • High performance (>99% efficiency)​
  • Good tight dynamic characteristics​​
  • Easy to drive, 0 to 5 V gate drive
  • Qualified for industrial applications according to JEDEC Standards

 

Applications

  • 650 V applications
    • Datacom and Telecom (AC/DC and DC/DC)
    • Photovoltaic (PV) micro inverter (DC/AC)
    • Industrial (DC/AC)
    • BLDC / micro servo motor drives
    • LED driver​
    • TV power supply unit (PSU)

       
  • 100/150 V applications
    • 400 V-48 V LLC converter for datacenters
    • 48 V to POL direct conversion​
    • Power supply (AC/DC) fast charging for e-mobility
    • USB-C power delivery fast charging for portables
    • LiDAR (non-automotive)​
    • Class D audio amplifiers
       

 

Product 12NC Datasheet Models Availability
GAN080-650EBE 9346 659 01332 DOWNLOAD PRODUCT PAGE BUY NOW
GAN140-650FBE 9346 659 03332 DOWNLOAD PRODUCT PAGE BUY NOW
GAN140-650EBE 9346 659 02332 DOWNLOAD PRODUCT PAGE BUY NOW
GAN190-650EBE 9346 659 04332 DOWNLOAD PRODUCT PAGE BUY NOW
GAN190-650FBE 9346 659 05332 DOWNLOAD PRODUCT PAGE BUY NOW
GAN3R2-100CBE 9346 658 99341 DOWNLOAD PRODUCT PAGE BUY NOW
GAN7R0-150LBE 9346 659 00328 DOWNLOAD PRODUCT PAGE BUY NOW

 

Performance, efficiency, reliability

The very high electron mobility of GaN enables the creation of devices with low on-resistance and exceptionally high switching frequency capability. These advantages are vital in next-generation power systems, such as industry 4.0 and renewable energy applications. Nexperia cascode GaN FETs are the enabler in these applications offering high power density, high performance, and high switching frequency. This unique solution facilitates the ease of driving the devices using well-known Si MOSFET gate drivers. Additionally, they deliver unmatched high junction temperature (Tj [max] 175 °C), ease of design freedom and improved reliability of power systems.
 

Resources

 

Key features

  • CCPAK GaN FETs (SMD)
    • Copper clip
    • Thermal performance
    • Manufacturability and robustness
    • Two cooling options
    • Plan for qualifications

       
  • TO-247 GaN FETs
    • High performance (>99% efficiency)
    • Low dynamic characteristics
    • Lowest WBG losses in reverse conduction
    • Leading soft-switching performance
    • Easy to drive, 0 to 12 V gate drive

 

Applications

  • CCPAK GaN FETs (SMD)​
    • Automotive EV
    • Industrial

       
  • TO-247 GaN FETs​
    • Solar inverters​
    • Server & Telecom power supplies​
    • Servo motor drives​
    • Battery and UPS​
       

 

Product 12NC Datasheet Availability
GAN063-650WSA 934660022127 DOWNLOAD BUY NOW
GAN041-650WSB 934661752127 DOWNLOAD BUY NOW
GAN111-650WSB 934666222127 DOWNLOAD  
GAN039-650NTB 934662153139 DOWNLOAD BUY NOW
GAN039-650NBB 934662151139 DOWNLOAD BUY NOW

 

 

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