Special product feature: IMZA65R072M1H
Leveraging the wide bandgap SiC material characteristics, the IMZA65R072M1H is a highlight product within Infineon’s CoolSiC™ trench MOSFETs 650 V. It enables a unique combination of performance, reliability, and ease of use. The IMZA65R072M1H is a 4-pin device in a TO-247-4 package. That translates - compared to 3-pin devices - due to the additional auxiliary source connection into drastically reduced switching losses. Suitable for high temperature and harsh environment operations, using this particular SiC MOSFET in designs leads to the simplified and cost-effective deployment of highest system efficiency.
| Key features |
Key benefits |
| Optimized switching behavior at higher currents |
Unique combination of high performance, high reliability, and ease of use |
| Commutation-robust, fast body diode with low Qrr |
Ease of integration |
| Superior gate-oxide reliability |
Suitable for topologies with continuous hard commutation |
| Best thermal conductivity and behavior |
High robustness and system reliability |
| Low RDS(on) and pulse current dependency on temperature |
Reduced system size leading to higher power density |
| Increased avalanche capability |
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| Compatible with standard drivers (recommended driving voltage: 18 V) |
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| Kelvin source provides up to 4 times lower switching losses |
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EiceDRIVER™ gate-driver ICs optimized for CoolSiC™ trench MOSFETs 650 V
1-channel and 2-channel galvanically isolated EiceDRIVERTM gate-driver ICs are the best choice for optimal CoolSiCTM operation. For use in a CCM totem-pole PFC functional or basic isolation provides the required robustness against switching noise. In secondary side controlled LLC stages reinforced isolation is indispensable. Common to all of them is the 13 V UVLO_OFF protection, which ensures that gate-source voltage is high enough to safely conduct the required drain currents in the CoolSiCTM trench MOSFETs 650 V.
Strong 4 A source and 8 A sink output currents are the key to minimize switching losses. Excellent ± 7 ns propagation delay accuracy minimizes dead-time losses.
Enablement of high performance topologies for energy-smart SMPS designs
Wide-bandgap products, such as the CoolSiC™ trench MOSFET 650 V (coming with robust body diode) and the CoolGaN™ 600 V HEMT portfolios from Infineon, act as enablers to move towards high-performance topologies like the continuous-conduction mode (CCM) totem-pole power factor corrector (PFC). A topology that ensures 99% efficiency in the PFC stage, leading to 98% overall system efficiency, while hard commutation is present in every switching cycle. Even under these very demanding conditions, CoolSiC™ trench MOSFETs 650 V provide the right balance of high efficiency, reliability, and ease of use. This is possible because they come along with roughly 80% lower Qrr and Qoss compared to the best silicon references, which ensures outstanding hard commutation robustness. Due to the low dependency of RDS(on) with temperature, the 99% efficiency level can be reached by using a 72 mΩ RDS(on) typ. part, eventually resulting in a system cost decrease.
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A full SMPS design requires a DC-DC stage. LLCs are commonly used soft-switching topologies in which not-continuous hard commutation can occur under certain conditions. Due to the outstanding Qrr level of CoolSiC™ trench MOSFETs 650 V, designs can be even more reliable while at the same time efficiency levels are further improved.
System-level diagram: High efficiency CoolSiC™ totem pole PFC in server switched mode power supply (SMPS)
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EBV - Infineon Switchers and Drivers - IMZA65R072M1H Table
