| System features | System benefits |
|---|---|
|
CoolSiC™ MOSFETs 650 V
600 V CoolMOS™ S7 Superjunction MOSFETs
EiceDRIVER™ gate-driver ICs
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|
CoolSiC™ trench MOSFETs 650 V product portfolio
The new CoolSiC™ trench MOSFETs 650 V are available in classic TO-247-3 packaging or integrated into TO-247-4! The benefit of using the latter is a drastic reduction of switching losses due to additional auxiliary source connection.
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|---|---|---|---|---|---|---|---|---|---|
| RDS(on) max. [mΩ] |
|
TO-247-4** |
TO-247-3 |
1-channel EiceDRIVER™ |
2-channel EiceDRIVER™ |
||||
| 34 |
|
IMZA65R027M1H |
IMW65R027M1H |
1EDB9275F* |
2EDF9275F* |
||||
| 64 |
|
IMZA65R048M1H |
IMW65R048M1H |
||||||
| 94 |
|
IMZA65R072M1H |
IMW65R072M1H |
||||||
| 142 | 107 |
IMZA65R107M1H | IMW65R107M1H | ||||||
*coming soon
**TO247-4: drastically reduced switching losses due to additional auxiliary source connection
Special product feature: IMZA65R072M1H
Leveraging the wide bandgap SiC material characteristics, the IMZA65R072M1H is a highlight product within Infineon’s CoolSiC™ trench MOSFETs 650 V. It enables a unique combination of performance, reliability, and ease of use. The IMZA65R072M1H is a 4-pin device in a TO-247-4 package. That translates - compared to 3-pin devices - due to the additional auxiliary source connection into drastically reduced switching losses. Suitable for high temperature and harsh environment operations, using this particular SiC MOSFET in designs leads to the simplified and cost-effective deployment of highest system efficiency.
| Key features | Key benefits |
|---|---|
| Optimized switching behavior at higher currents | Unique combination of high performance, high reliability, and ease of use |
| Commutation-robust, fast body diode with low Qrr | Ease of integration |
| Superior gate-oxide reliability | Suitable for topologies with continuous hard commutation |
| Best thermal conductivity and behavior | High robustness and system reliability |
| Low RDS(on) and pulse current dependency on temperature | Reduced system size leading to higher power density |
| Increased avalanche capability | |
| Compatible with standard drivers (recommended driving voltage: 18 V) | |
| Kelvin source provides up to 4 times lower switching losses |
EiceDRIVER™ gate-driver ICs optimized for CoolSiC™ trench MOSFETs 650 V
1-channel and 2-channel galvanically isolated EiceDRIVERTM gate-driver ICs are the best choice for optimal CoolSiCTM operation. For use in a CCM totem-pole PFC functional or basic isolation provides the required robustness against switching noise. In secondary side controlled LLC stages reinforced isolation is indispensable. Common to all of them is the 13 V UVLO_OFF protection, which ensures that gate-source voltage is high enough to safely conduct the required drain currents in the CoolSiCTM trench MOSFETs 650 V.
Strong 4 A source and 8 A sink output currents are the key to minimize switching losses. Excellent ± 7 ns propagation delay accuracy minimizes dead-time losses.
Enablement of high performance topologies for energy-smart SMPS designs
Wide-bandgap products, such as the CoolSiC™ trench MOSFET 650 V (coming with robust body diode) and the CoolGaN™ 600 V HEMT portfolios from Infineon, act as enablers to move towards high-performance topologies like the continuous-conduction mode (CCM) totem-pole power factor corrector (PFC). A topology that ensures 99% efficiency in the PFC stage, leading to 98% overall system efficiency, while hard commutation is present in every switching cycle. Even under these very demanding conditions, CoolSiC™ trench MOSFETs 650 V provide the right balance of high efficiency, reliability, and ease of use. This is possible because they come along with roughly 80% lower Qrr and Qoss compared to the best silicon references, which ensures outstanding hard commutation robustness. Due to the low dependency of RDS(on) with temperature, the 99% efficiency level can be reached by using a 72 mΩ RDS(on) typ. part, eventually resulting in a system cost decrease.
A full SMPS design requires a DC-DC stage. LLCs are commonly used soft-switching topologies in which not-continuous hard commutation can occur under certain conditions. Due to the outstanding Qrr level of CoolSiC™ trench MOSFETs 650 V, designs can be even more reliable while at the same time efficiency levels are further improved.
System-level diagram: High efficiency CoolSiC™ totem pole PFC in server switched mode power supply (SMPS)
CoolSiC™ trench MOSFET 650 V product portfolio in SMPS topologies with matching gate-driver ICs
| SMPS topology | Power class |
Recommended CoolSiCTM MOSFET 650 V RDS(on) class |
Recommended minimum OFF UVLO |
Recommended EiceDRIVER™ gate-driver IC |
|---|---|---|---|---|
|
CCM totem-pole PFC (functional isolation required) |
3.9 kW | IMx65R027M1H (40 A)* | 11.0 V |
2EDF9275F*** or 2x 1EDB9275F*** or 2x 1EDI20I12MF |
| IMx65R048M1H (40 A)** | 12.2 V |
2EDF9275F*** or 2x 1EDB9275F*** |
||
| 3.3 kW | IMx65R048M1H (33 A)* | 11.7 V | ||
| IMx65R072M1H (33 A)** | 12.7 V | |||
| 2.8 kW | IMx65R072M1H (27 A)* | 12.2 V | ||
| IMx65R107M1H (27 A)** | 13.0 V | |||
| 2.3 kW | IMx65R107M1H (22 A)* | 12.2 V | ||
|
LLC DC-DC (reinforced isolation required) |
n/a | any | 11.0 V | 2EDS9265H*** |
*highest efficiency achievable with recommended RDS(on)
**RDS(on) variants being lower price alternatives
***coming soon
Half-cycle management: CoolMOS™ S7 SJ MOSFETs and EiceDRIVER™ gate-driver ICs
The second half bridge in the CCM totem-pole PFC runs at low frequencies. Here, the perfect choice is the 600 V CoolMOS™ S7, a SJ MOSFET designed for low-frequency switching, offering the lowest RDS(on) at the best price.
600 V CoolMOS™ S7 product portfolio and matching EiceDRIVER™ gate-driver ICs
| 600 V CoolMOS™ S7 | EiceDRIVER™ gate-driver ICs for 600 V CoolMOS™ S7 | ||
|---|---|---|---|
| RDS(on) max. [mΩ] | TO-220 | TOLL | 2-channel EiceDRIVER™ |
| 22 | IPP60R022S7 | IPT60R022S7 | 2EDF7275F |
| 40 | IPT60R040S7 | ||
| 65 | IPT60R065S7 | ||
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