CoolSiC™ / CoolMOS™ / discrete IGBTs
For different DC charging systems and power levels Infineon offers solutions with either modules or discrete IGBTs.
For chargers from 50 kW to 350 kW Infineon recommends solutions using the CoolSiC™ Easy Modules for the Vienna rectifier in the PFC stage but also in the converter stage in the DCDC stage.
The CoolSiC™ MOSFET offers a series of advantages: These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the anti-parallel diode, temperature independent low switching losses, and threshold-free on-state characteristics.
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Product name | Benefits |
EasyDUAL™ 2B with CoolSiC™ MOSFET | FF6MR12W2M1_B11 |
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FF8MR12W2M1_B11 | ||
EasyDUAL™ 1B with CoolSiC™ MOSFET | FF11MR12W1M1_B11 |
If you are designing a charger solution in the 30 kW to 150 kW power range discrete devices are typically used.
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Product name | Benefits |
TRENCHSTOP™ 5 H5 | IKW75N65EH5 |
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CoolSiC™ Schottky Diode |
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CoolMOS™ CSFD | IPW60R037CSFD |
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CoolMOS™ P7 | IPW60R037P7 |
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CoolMOS™ CFD7 | IPW60R018CFD7 |
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