Nexperia is all you need – Discover the latest trends and products
Nexperia is a dedicated global leader in Discretes, Logic and MOSFETs devices. This new company became independent at the beginning of 2017. Focused on efficiency, Nexperia produces consistently reliable semiconductor components at high volume: 85 billion annually. The company’s extensive portfolio meets the stringent standards set by the Automotive industry. And industry-leading small packages, produced in their own manufacturing facilities, combine power and thermal efficiency with best-in-class quality levels. Built on over half a century of expertise, Nexperia has 11,000 employees across Asia, Europe and the U.S. supporting customers globally.
- MLPAK33 MOSFETs
- GaN
- ASFETs
- NextPower 80 V / 100 V
MLPAK33 MOSFETs
Surface mount package with thermal enhancement
MLPAK33 MOSFETs for mobile, computing, consumer and industrial applications, available in N-Channel and P-Channel. The package comes with a large heat sink area for high thermal power capability, housed in the 3.3 x 3.3 mm footprint (0.8 mm height). Offering footprint compatibility for the industry-known DFN3333. MLPAK33 brings low spiking, low ringing, low QG, low QGD and low RDS(on) for benefits in load switching applications such as smartphones.
Resources:
Family page: MLPAK33 MOSFETs: Surface mount package with thermal enhancement- Blog: MLPAK33 – a flexible choice for 3x3 MOSFETs
- App note: Load switches for mobile and computing applications
- App note: MOSFET load switch PCB with thermal measurement
Key features:
- Large heat sink for high thermal power capability
- Small 3.3 x 3.3 mm footprint
- Low height of only 0.8 mm
- Optimized for a consumer grade application profile
- Low spiking and ringing for low EMI designs
- Low QG & QGD for super-fast switching
- Low RDS(on) down to 6 mΩ and ID up to 13 A
- Logic-level compatible drive voltage
- Power dissipation (Ptot) of up to 4.8 W
Applications:
- Low RDS(on) load switching for e.g. smartphones
- DC/DC conversion
- Battery management
- Charging devices
- Solid state / hard drive
| PRODUCT | Description | DATASHEET |
|---|---|---|
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PXN010-30QL |
30 V, N-channel Trench MOSFET, RDS(on) [max] 10.2 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
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PXN017-30QL |
30 V, N-channel Trench MOSFET, RDS(on) [max] 17.4 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
|
PXN018-30QL |
30 V, N-channel Trench MOSFET, RDS(on) [max] 18 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
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PXN6R2-25QL |
25 V, N-channel Trench MOSFET, RDS(on) [max] 6.2 mΩ ( VGS = 10V) |
DOWNLOAD DATASHEET |
|
PXN6R7-30QL |
30 V, N-channel Trench MOSFET, RDS(on) [max] 6.7 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
|
PXN7R7-25QL |
25 V, N-channel Trench MOSFET, RDS(on) [max] 7.7 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
|
PXN8R3-30QL |
30 V, N-channel Trench MOSFET, RDS(on) [max] 8.3 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
|
PXN9R0-30QL |
30 V, N-channel Trench MOSFET, RDS(on) [max] 9.1 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
|
PXP011-20QX |
20 V, P-channel Trench MOSFET, RDS(on) [max] 11.4 mΩ (VGS = 4.5V) |
DOWNLOAD DATASHEET |
|
PXP013-30QL |
30 V, P-channel Trench MOSFET, RDS(on) [max] 13.3 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
|
PXP018-20QX |
20 V, p-channel Trench MOSFET, RDS(on) [max] 18 mΩ (VGS = 4.5V) |
DOWNLOAD DATASHEET |
|
PXP020-20QX |
20 V, P-channel Trench MOSFET, RDS(on) [max] 20mΩ (VGS = 4.5V) |
DOWNLOAD DATASHEET |
|
PXP1500-100QS |
100 V, P-channel Trench MOSFET, RDS(on) [max] 1500 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
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100 V, P-channel Trench MOSFET, RDS(on) [max] 400 mΩ (VGS = 10V) |
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30 V, P-channel Trench MOSFET, RDS(on) [max] 6.7 mΩ (VGS = 10V) |
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30 V, P-channel Trench MOSFET, RDS(on) [max] 9.1 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
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30 V, N-channel Trench MOSFET, RDS(on) [max] 4.7 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
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30 V, N-channel Trench MOSFET, RDS(on) [max] 5.4 mΩ (VGS = 10V) |
DOWNLOAD DATASHEET |
2nd generation (H2) power GaN FETs
Efficient and effective high-power FETs
Extending Nexperia’s GaN footprint with the new GAN041-650WSA, offering performance improvements as well as 80+ titanium grade efficiency, satisfying new EU server power requirements.
Resources:
- Family page: GaN FETs
- Brochure: Nexperia GaN FETs - Performance, efficiency, reliability
- Brochure: 650 V GaN FETs – from invention to industrialization
- Blog: Power GaN: the need for efficient power conversion
- Blog: GaN FETs help to push 80 PLUS Titanum grade
- Blog: GaN FETs: Why Cascode?
- Blog: Power GaN FETs: a strategic approach to bring the best without compromising robustness and quality
- Blog: GaN shines a light on PV inverter efficiency
- Press release: Nexperia launches high-efficiency GaN FET with industry-leading performance
- Press release: Nexperia announces next generation 650 V Gallium Nitride (GaN) Technology
- Press release: Nexperia and United Automotive Electronic Systems Co., Ltd. Agree Comprehensive Partnership for Gallium Nitrid
- Press release: Nexperia’s 650 V GaN FETs enable 80 PLUS ® Titanium-class power supplies operating at 2 kW and above
- App note: Understanding Power GaN FET data sheet parameters
- App note: Circuit design and PCB layout recommendations for GaN FET half bridges
- App note: Probing considerations for fast switching applications
- App note: Power GaN technology: the need for efficient power conversion
- Technical note: An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability
- Whitepaper: Power GaN technology: the need for efficient power conversion
- Whitepaper: Power GaN technology: the need for efficient power conversion CHN
- Whitepaper: 650 V GaN FET technology delivers the best efficiency, and the robustness needed for AEC-Q101 qualification chinese version
- Whitepaper: 650 V GaN FET technology delivers the best efficiency, and the robustness needed for AEC-Q101 qualification
Key features:
- Ultra-low reverse recovery charge
- Simple gate drive (0 V to +10 V or 12 V)
- Robust gate oxide (±20 V capability)
- High gate threshold voltage (+4 V) for very good gate bounce immunity
- Very low source-drain voltage in reverse conduction mode
- Transient over-voltage capability
Applications:
- Hard and soft switching converters for industrial and datacom power
- Bridgeless totempole PFC
- PV and UPS inverters
- Servo motor drives
| PRODUCT | Description | DATASHEET |
|---|---|---|
|
GAN041-650WSB |
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package |
DOWNLOAD DATASHEET |
ASFETs for Hotswap and Soft Start with Enhanced SOA
Reliable linear mode, enhanced SOA and low RDS(on)
Whether it is in the cloud or at the edge, we truly live in a 24/7 world. So much of our daily lives depend on rack-based computers, communications and storage systems that are always-on. Ensuring these systems do not experience any power disruption and to protect the components on replacement boards when they are inserted into a live system, it is essential that in-rush current is carefully controlled. In normal MOSFETs, strong SOA and low RDS(on) are mutually exclusive. Offering both capabilities in a single device, Nexperia’s specific MOSFETs for Hotswap and Soft Start are optimized for a non-stop world.
Resources:
- Family page: Nexperia Application Specific MOSFETs: Optimized to your needs
- App note: Maximum continuous currents in NEXPERIA LFPAK power MOSFETs
- Press release: Nexperia extends market-leading low RDS(on) MOSFET performance with the release of its 0.57 mΩ product in LFPAK56
- Press release: Nexperia announces lowest RDS(on) MOSFETs in LFPAK56 and LFPAK33 without compromising other vital parameters
- Press release: Nexperia MOSFETs deliver Best-In-Class Safe Operating Area and improved RDS(on) for Hot Swap designs
- Press release: Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%
- Blog: Shrinking hotswap footprint with enhanced SOA
Key features:
- MOSFETs with a strong linear mode performance and enhanced Safe Operating Area (SOA) are required to manage in-rush current effectively and reliably when capacitive loads are introduced to the backplane
- The new device enhances SOA by 166% when compared to 50 V in D2PAK package
- Once a replacement board is safely powered up, the MOSFET is turned fully ON. In this mode of operation, a low RDS(on) value is of primary importance, helping to keep temperatures down and system efficiency at a maximum
Applications:
- Hotswap for communication infrastructure
- High performance rack-/blade based server
- Hotswap for blade server
| PRODUCT | Description | DATASHEET |
|---|---|---|
|
PSMN4R8-100YSE |
N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E |
DOWNLOAD DATASHEET |
NextPower 80 V / 100 V
Smaller, faster, cooler
NextPower 80/100 V MOSFETs are Nexperia’s latest generation parts recommended for high efficiency switching and high reliability applications. With 50% lower RDS(on) and strong avalanche energy rating. Ideally suited for power supply, telecom and industrial designs, especially suiting USB-PD Type-C chargers and adaptors and 48 V DC-DC adaptors. The devices feature low body diode losses with Qrr down to 50 nano-coulombs (nC) - resulting in lower reverse recovery current (Irr), lower voltage spikes (Vpeak) and reduced ringing which allows for further optimised dead-time.
Resources:
- Family page: Nexperia NextPower 80/100V Portfolio: Smaller, faster, cooler
- App note: Understanding power MOSFET data sheet parameters
- App note: Using RC thermal models
- App note: LFPAK MOSFET thermal design guide
- Press release: NextPower 100V power MOSFETs from Nexperia feature low Qrr, and high 175°C rating
- Press release: First products from Nexperia’s new Manchester 8-inch wafer line are industry-leading Qrr Figure of Merit 80 V / 100 V MOSFETs
- Press release: Nexperia’s new Application-Specific MOSFETs (ASFETs) for hot-swap increase SOA by 166% and slash PCB footprint by 80%
- Blog: Is today’s accepted MOSFET Figure of Merit still relevant?
- Blog: Qrr: overlooked and underappreciated in efficiency battle
- Blog: Enhanced body diode behavior improves Qrr and Vsd
- Blog: Shrinking hotswap footprint with enhanced SOA
Key features:
- NextPower 100 V uses deep-trenches and charge-balanced structure (resurf)
- High efficiency and low spiking in switching applications
- Qualified to 175˚C
- LFPAK56 low stress lead-frame and wave-solder compatible
- Low RDS(on)
- Improved Qg(tot) figure-of-merit (FOM)
- Best-in-class low Qrr gives high efficiency in switching applications
- Avalanche rated, 100% avalanche tested
- Optimised for switching, low spiking and high efficiency
Applications:
- Synchronous rectifier in flyback and resonant topology
- AC/DC and DC/DC converters
- LED lighting
- Full-bridge and half-bridge topologies
- Motor control
- UPS and Solar inverter
| PRODUCT | Desription | DATASHEET |
|---|---|---|
|
PSMN011-100YSF |
NextPower 100V, 10.9 mΩ N-channel MOSFET in LFPAK56 package |
DOWNLOAD DATASHEET |
|
PSMN3R9-100YSF |
NextPower 100 V, 4.3 mΩ, 120 A, N-channel MOSFET in LFPAK56E package |
DOWNLOAD DATASHEET |
|
PSMN4R8-100YSE |
N-channel 100 V, 4.8 mΩ MOSFET with enhanced SOA in LFPAK56E |
DOWNLOAD DATASHEET |
|
PSMN6R9-100YSF |
NextPower 100 V, 7 mΩ N-channel MOSFET in LFPAK56 package |
DOWNLOAD DATASHEET |
|
PSMN8R7-100YSF |
NextPower 100 V, 9 mΩ N-channel MOSFET in LFPAK56 package |
DOWNLOAD DATASHEET |
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