Switches & drivers based on Gallium nitride technology
CoolGaN™ 600 V e-mode HEMTs - highest efficiency & density levels in SMPS
With CoolGaN™, Infineon launches a GaN enhancement mode high electron mobility transistor (e-mode HEMT) portfolio with industry-leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor-made to deliver the market’s highest efficiency and density levels in switched mode power supplies. The application-based qualification approach extends beyond that of other GaN products in the market.
The e-mode (normally-off) concept is a single-chip solution and hence facilitates further integration either on the chip or package level. Infineon brought its e-mode concept to the maturity, required for demanding applications, delivering at the same time the highest performance among all available GaN HEMTs.
GaN switch performance features low charge and excellent dynamic performance in reverse conduction compared to silicon FET options. This enables more efficient operation at existing frequencies, and much higher frequency operation which can improve power density by shrinking the size of passive components. Infineon’s CoolGaN™ 600 V impresses with highest PFC efficiency (>99.3% for 2.5 kW PFC) and highest density for same efficiency (>160 W/in3 for 3.6 kW LLC with >98% efficiency).
The CoolGaN™ portfolio is built around high performing SMD packages with lower parasitics and good thermal performance to fully exploit the benefits of GaN both, for bottom-side cooling (DSO-20-85) and top-side cooling (DSO-20-87). By offering a full SMD package series Infineon aims to support high frequency operations.
Infineon’s qualification plan for its GaN switches follows a dedicated approach well beyond Si standards (e.g. JEDEC), thereby setting the next level of wide bandgap quality. Application profiles (including most stringent and challenging applications requiring more than 15 years lifetime, e.g. server / telecom) are an integral part of the qualification. Failure models – based on accelerated test conditions – ensure that in the field a target lifetime and quality are met.
Target applications: servers, data centers, telecom, wireless charging, chargers, adapters
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CoolGaN™ 600 V e-mode HEMTs product portfolio
| RDS(on) max. |
DSO-20-85 |
DSO-20-87 |
HSOF-8-3 |
DFN 8x8 |
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| 35 mΩ | IGO60R035D1** | IGOT60R035D1** | IGT60R035D1** | |
| 70 mΩ | IGO60R070D1 Download Datasheet |
IGOT60R070D1 Download Datasheet |
IGT60R070D1 Download Datasheet |
IGLD60R070D1 Download Datasheet |
| 190 mΩ | IGT60R190D1S* Download Datasheet |
IGLD60R190D1** |
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| IGT60R190D1** | ||||
| 340 mΩ | IGLD60R340D1** |
* Standard grade
** Coming soon
GaN EiceDRIVER™ ICs - 1-channel galvanically-isolated gate drivers for enhancement mode GaN HEMTs
Every high-voltage GaN switch needs a dedicated driver IC to benefit from:
- negative gate-driver voltage -> protection against spurious turn-on
- two off-voltage levels -> least dead-time losses
- excellent timing accuracy -> best system efficiency
- constant switching transients -> least R&D effort
- best robustness
Infineon’s newly launched CoolGaN™ switches portfolio is easy-to-use thanks to a perfectly matching gate driver IC portfolio. By introducing the GaN EiceDRIVER™ family Infineon extends its range of one-channel galvanically-isolated gate driver ICs. The new components with high gate current for fast turn-on and robust gate-drive topology have been developed to optimize the performance of enhancement mode GaN HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage. Resulting, driver complexity has been significantly reduced (medium effort for design-in) as no more customized drivers are needed.
Target applications: high-voltage bridgeless totem-pole PFC stages and high-voltage resonant LLC stages in telecom and server SMPS, data centers, active clamping flybacks in AC adapters, chargers, three-phase motor drives, Class E wireless charging, Class D audio amplifiers
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High-efficiency GaN switched mode power supply (SMPS) - 1EDF5673 and 1EDS5663H use case
GaN EiceDRIVER™ ICs product portfolio - Isolation class determines packages
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| Datasheets | Package | Isolation class | Rating | Surge testing | Certification | Propagation delay accuracy | Typ. high level (sourcing) output resistance | Typ. low level (sinking) output resistance | |
| 1EDF5673K | 1EDF5673K Datasheet | 13-pin LGA 5x5 mm | functional | VIO = 1.5kVDC | n.a. | n.a. | -6 ns /+7 ns | 0.85 Ohm | 0.35 Ohm |
| 1EDF5673F | 1EDF5673F Datasheet | 16-pin DSO 150 mil | functional | VIO = 1.5kVDC | n.a. | n.a. | -6 ns /+7 ns | 0.85 Ohm | 0.35 Ohm |
| 1EDS5663H | 1EDS5663H Datasheet | 16-pin DSO 300 mil | reinforced | VIOTM = 8 kVpk VISO = 5.7kVrms |
VISOM > 10kVpk | VDE0884-10, UL1577 | -6 ns /+7 ns | 0.85 Ohm | 0.35 Ohm |
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