600 V CoolMOS™ G7 SJ MOSFET and CoolSiC™ Schottky diode G6 in Double DPAK (DDPAK) package
By introducing the first top-side cooled SMD package with built-in 4-pin Kelvin source configuration, Infineon addresses high power SMPS applications such as PC power, solar, server and telecom with a new cooling concept. The top-side cooling approach of DDPAK allows overcoming the thermal limits of the PCB material by thermal decoupling of board and semiconductor.
This feature enables customers to either increase the system lifetime of their design or to improve the power density at a given form factor. The decoupling can be used to achieve up to ~12°C lower board temperature on the output power level compared to a standard cooling concept or up to 20 percent higher power dissipation on the board temperature level compared to a standard cooling concept.
With 600 V CoolMOS™ SJ MOSFET G7 and 650 V CoolSiC™ Schottky diode G6 - both available in DDPAK package - Infineon provides a system solution for high current, hard switching topologies such as PFC, and a high-end efficiency solution for LLC topologies.
By combining the DDPAK offering with Infineon’s single-channel, low-side gate driver family with truly differential inputs (1EDN TDI), optimized system solutions for high power designs are enabled.
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1EDN8550 driving Kelvin source CoolMOS™ superjunction (SJ) MOSFET in boost PFC
Product portfolio DDPAK
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Related Documents
RDS(on) max. [mΩ] | CoolMOS™ G7 SJ MOSFET | IF [A] | CoolSiC™ Schottky diode G6 | ||
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Product | OPN | Product | OPN | ||
190 | IPDD60R190G7 | IPDD60R190G7XTMA1 | 4 | IDDD04G65C6 | IDDD04G65C6XTMA1 |
150 | IPDD60R150G7 | IPDD60R150G7XTMA1 | 6 | IDDD06G65C6 | IDDD06G65C6XTMA1 |
125 | IPDD60R125G7 | IPDD60R125G7XTMA1 | 8 | IDDD08G65C6 | IDDD08G65C6XTMA1 |
102 | IPDD60R102G7 | IPDD60R102G7XTMA1 | 10 | IDDD10G65C6 | IDDD10G65C6XTMA1 |
80 | IPDD60R080G7 | IPDD60R080G7XTMA1 | 12 | IDDD12G65C6 | IDDD12G65C6XTMA1 |
50 | IPDD60R050G7 | IPDD60R050G7XTMA1 | 16 20 |
IDDD16G65C6XTMA1 IDDD20G65C6XTMA1 |