Vishay SQRS160ELP-T1_GE3

The SQRS160ELP‑T1_GE3 from Vishay Intertechnologies is a power field‑effect transistor (power FET) designed for high‑efficiency switching and robust performance in demanding electronic systems. 

This MOSFET variant is specified as an N‑channel device rated for 40 V (D‑S) operation and engineered to withstand junction temperatures up to 175 °C, making it well‑suited for thermally challenging environments. Its design supports strong performance in power management, motor control, DC‑DC conversion, and other high‑current or high‑efficiency circuits where reliability and thermal stability are essential.

Key features

• N‑channel power MOSFET design, suitable for efficient switching and signal control in power‑driven applications
• 40 V drain‑source voltage rating, making it appropriate for low‑ to mid‑voltage power systems
• High thermal capability, supporting operation up to 175 °C
• RoHS‑compliant device

Applications

• Signal control circuits, where the device functions as a transistor to regulate or control electrical signals
• Power switching stages, leveraging its capability as a power field‑effect transistor to efficiently switch electrical loads
• Amplification circuits, since transistors are commonly used to amplify electrical signals in various electronic systems
• General power‑electronics designs requiring a MOSFET‑based solution for controlled creation, shaping, or management of electrical signals