Vishay SIJK4610-T1-GE3

The SIJK4610-T1-GE3 is a compact N-channel enhancement-mode power MOSFET from Vishay Intertechnology, engineered for efficient low-voltage power management. Built using Vishay’s advanced TrenchFET^® technology, it delivers low on-resistance and fast switching performance, making it suitable for modern portable and space-constrained electronic designs. Housed in a small surface-mount PowerPAK^® SC-70 package, the SIJK4610-T1-GE3 is optimized for high efficiency and thermal performance despite its minimal footprint. Its low R_DS(on) helps reduce conduction losses, while low gate charge supports faster switching and improved overall system efficiency. This MOSFET is commonly used in DC/DC converters, load switching, battery protection circuits, and other power management applications in consumer electronics, industrial devices, and embedded systems where reliability, efficiency, and compact size are critical.

Key features

• TrenchFET^® Gen IV power MOSFET
• Leadership R_DS(on) minimizes power loss from conduction
• 100% R_g and UIS tested
• Kelvin connection for reduced gate noise

Applications

• Synchronous rectification
• OR-ing and hot swap switch
• Power supplies
• Battery management