Vishay MXPQ120A045SE-1GE3
MaxSiC® 1200 V N-Channel SiC MOSFET
The MXPQ120A045SE features robust electrical characteristics, including a high drain-source voltage rating of 1200 V and continuous drain current capability around 52 A, paired with low on-resistance for efficient conduction. Its automotive qualification (AEC-Q101) ensures reliability under harsh temperature and operational conditions, and it’s built in a TO-263 (D2PAK 7L) package to support effective thermal performance and power dissipation. These properties make it suitable for power stages in onboard chargers, inverters, and DC-DC converters where energy efficiency and thermal robustness are essential.
Key features
- Designed for up to 1200 V drain-source voltage
- Silicon carbide technology enables rapid switching with lower switching losses
- AEC-Q101 Automotive Qualification
- Short-circuit robustness
Applications
- Electric Vehicle (EV) on-board chargers
- Automotive DC-DC converters
- Solar inverters
- Industrial motor drives
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