Vishay MXP120A063SE-T1GE3
MaxSiC® 1200 V N-channel SiC MOSFET
The Vishay MXP120A063SE is a high‑performance silicon carbide (SiC) power transistor from Vishay’s MaxSiC® family. It’s an N‑channel MOSFET designed for demanding power applications, offering a 1200V drain‑to‑source voltage suitable for high‑voltage systems such as solar inverters, energy storage converters, and industrial UPS units. Built in a rugged D2PAK (TO‑263 7L) package, it supports significant continuous currents and robust power handling, making it ideal for efficient power switching in compact hardware designs
Key features
- 1200 V drain-to-source voltage for high-voltage applications.
- Low gate charge and quick switching times for efficient power conversion.
- Robust thermal performance: Operates up to 175 °C
- Low conduction losses: Silicon carbide (SiC) technology reduces energy losses
Applications
- Solar inverters: Efficiently converts DC from solar panels to AC for the grid
- DC-DC converters: High-frequency switching in energy storage and power supplies
- Motor drives: Drives industrial motors with minimal energy loss
- Uninterruptible Power Supplies (UPS): Enhances reliability and efficiency in backup power systems
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