Toshiba TK057V60Z Power MOSFET, N Channel, 600V
600V super junction MOSFET with ultra‑low RDS(ON) in compact DFN8×8, enabling higher efficiency and power density
The Toshiba TK057V60Z is a 600V N‑channel super junction MOSFET featuring ultra‑low RDS(ON) of 0.047Ω and low gate charge for high efficiency.
Based on the DTMOSVI process and housed in a compact DFN8×8 package, it enables higher power density, reduced losses and smaller designs.
Ideal for modern industrial power supplies requiring efficiency and compactness.
Key features
- 600V VDSS rating: suitable for demanding industrial power designs
- Ultra‑low RDS(ON) 0.047Ω typ.: reduced conduction losses and heat
- Low Qgd 15nC typ.: improved switching efficiency at high frequency
- DTMOSVI technology: up to 36% lower FoM (RDS(ON) x Qg) vs. previous generation
- DFN8×8 package: higher power density and compact PCB layout
- Kelvin source pin: stable gate drive and reduced parasitic effects
- 40A drain current capability: supports high‑power applications
Applications
- Switched‑mode power supplies (SMPS)
- Data centre server power supplies
- Uninterruptible power supplies (UPS)
- Photovoltaic inverters and power conditioners
- Industrial power conversion systems
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