onsemi T2PAK EliteSiC M3S MOSFETs 650V
Silicon Carbide (SiC) MOSFET - EliteSiC™ M3S 650 V T2PAK (12mΩ,16mΩ,23mΩ)
EliteSiC 650V M3S MOSFET uses a completely new technology that provides superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size. The T2PAK allows heat to be drawn directly into the heatsink rather than being forced into the main circuit board.
Key features
- New M3S technology: 12, 16, 23 mohm RDS(ON) with low Eon and Eoff losses
- Top cool design: Allows heat to be pulled directly into application heatsink rather than the main component board
- Flexible leads: Absorbs board level stress preventing delamination and cracking
- EliteSiC 650V M3S technology: Best in class figure of merit in the 650V SiC MOSFET market space
- AEC Q101 qualification: Automotive qualified to support BEV off-main-battery applications
Applications
- On Board Charger (OBC)
- High-voltage DC/DC converters for EV/HEV
- EV Charging systems (Vehicle‑Side & Infrastructure‑Adjacent)
- Traction inverter auxiliary power stages
- Electric Powertrain auxiliary systems
- Automotive energy storage & power distribution
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