onsemi NTHL016N065M3S | Silicon Carbide (SiC) MOSFETs

NTHL016N065M3S is an EliteSiC™ 650 V N‑channel silicon carbide MOSFET based on onsemi’s M3S planar technology, optimized for fast‑switching power applications. The M3S planar structure operates reliably with negative gate‑to‑source voltage drive and is robust against gate turn‑off voltage spikes, simplifying gate‑drive design in high‑speed switching environments.

The device delivers optimum performance when driven with an 18 V gate voltage, while also supporting reliable operation at 15 V gate drive. With a typical R_DS(on) of 16.8 mΩ at V_GS = 18 V, ultra‑low total gate charge, and low output capacitance, NTHL016N065M3S enables high‑speed switching with reduced conduction and switching losses.

Packaged in a TO‑247‑3L, the device supports high continuous drain current and is 100% avalanche tested, making it well suited for demanding power conversion and energy infrastructure designs.

Key features

• Excellent FOM [ = R_dson * E_oss ]
• Ultra low gate charge (Q_G(tot) = 98 nC)
• High speed switching with low capacitance (C_oss = 198 pF)
• 15V to 18V gate drive
• New M3S technology: 16 mohm R_DS(ON) with low E_on and E_off losses
• 100% Avalanche tested
• Halide free and RoHS compliant

Applications

• Switch‑mode power supplies (SMPS)
• Solar inverters
• Uninterruptible power supplies (UPS)
• Energy storage systems
• EV charging infrastructure