onsemi EliteSiC MOSFET T2PAK
Silicon Carbide (SiC) MOSFET – EliteSiC, (12, 16, 23 mohm), 650 V, M3S, T2PAK (top cool package)
The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Key features
- Top cool SMD package
- T2PAK package with Kelvin source configuration
- Excellent FOM [ = Rdson * Eoss ]
- Ultra low gate charge (QG(tot) = 130 nC)
- High speed switching with low capacitance (Coss = 266 pF)
- 15V to 18V gate drive
- New M3S technology: 12 mohm RDS(ON) with low Eon and Eoff losses
- 100% avalanche tested
- Halide free and RoHS compliant
Applications
- Industrial
- UPS / ESS
- Solar
- EV Charger
Do you have a Question?
Contact EBV
If you need any assistance, please click below to find your closest EBV sales office.
Related documents |