Nexperia Low-Side Gate Driver
Dual high‑frequency MOSFET gate driver delivering robust performance and precise timing for automotive and synchronous rectifier systems
NGD31251 is a high‑frequency, dual‑channel MOSFET gate driver for high‑power automotive systems.
It provides 5 A sink/source capability and tolerates −10 V on its inputs to improve robustness against ground bounce. Its inputs are supply‑independent and compatible with most controller outputs.
Fast 11 ns rising and 13 ns falling delays support high‑frequency operation with minimal mismatch, ideal for synchronous rectifiers and other timing‑critical applications. Parallel use of both channels increases drive strength, with 2 ns delay matching to prevent shoot‑through without extra resistors.
Key features
- Absolute maximum VDD pin voltage: 28 V
- Typical 5 A sink and 5 A source output currents
- Input pins capable of withstanding up to -10 V and are independent of power supply
- Operation switching frequency up to 1 MHz
- VDD UVLO point: 4.2 V
- Symmetrical undervoltage lockout for both channels
- -40 °C to 140 °C junction temperature range
- SOT96-2 package
Applications
- Power supplies for telecom, datacom and industrial inverters
- Power factor correction (PFC) circuits
- Solar power supplies
- Residential EV chargers
- Motor drives
- Pulse transformer drivers
Do you have a Question?
Contact EBV
If you need any assistance, please click below to find your closest EBV sales office.
Related documents |