Infineon IMZC120R007M2H
The Cool SiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology
The Cool SiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Key features
- RDS(on) = 7 mΩ at VGS = 18 V, Tvj = 25°C
- Very low switching losses
- Wider max. VGS range from -10 V to +25 V
- Overload operation up to Tvj = 200°C
- Short circuit withstand time 2 µs
- Benchmark gate threshold voltage 4.2 V
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
- .XT interconnection technology
- Best-in-class RDS(on) offered in the market
Applications
- Uninterruptible power supplies (UPS)
- General purpose motor drive
- Online UPS
- Industrial UPS
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