Vishay SQZF140ELPW Symmetric Dual N-Channel 40 V (D-S) MOSFET
Dual 40 V TrenchFET® MOSFET, ultra-low RDS(on), high current, compact PowerPAIR® for efficient DC/DC and power designs
SQZF140ELPW-T1_GE3, a new dual N-channel 40 V MOSFET featuring Vishay’s latest TrenchFET® Gen IV technology. This advanced device delivers industry-leading on-resistance and current capability in a compact PowerPAIR® 6 mm × 5 mm package, providing power designers with a high-efficiency, space-saving solution for synchronous buck converters, DC/DC stages, and power management applications.
Engineered for superior switching performance, the SQZF140ELPW-T1_GE3 achieves typical on-resistance values as low as 1.5 mΩ at 10 V gate drive and 2.4 mΩ at 4.5 V, significantly reducing conduction losses. Each channel supports up to 162 A continuous drain current (25 °C), offering a robust solution for high-density and high-current power designs.
Key features
- Dual symmetric N-channel MOSFET configuration (half-bridge topology)
- TrenchFET® Gen IV structure for reduced switching loss and superior figure-of-merit (FOM)
- Compact PowerPAIR® 6x5 FSW package with “wettable flanks” for automated optical inspection (AOI)
- 100 % tested for gate resistance (Rg) and unclamped inductive switching (UIS) reliability
Applications
- Synchronous buck and half-bridge converters
- POL (point-of-load) power supplies
- Motor control units and power management modules
- High-efficiency server and telecom DC/DC stages
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