Vishay SiRS5700DP
High-performance N-channel MOSFET
TrenchFET® Gen V Technology: Offers a very low product of on-resistance and gate charge, enhancing efficiency in switching power-conversion applications.
Boost Efficiency with the Vishay SiRS5700DP – Power You Can Trust
Take your power conversion designs to the next level with the Vishay SiRS5700DP, an N-channel MOSFET built with cutting-edge TrenchFET® Gen V technology. Designed for high performance in demanding environments, this device offers ultra-low on-resistance, high current handling, and exceptional thermal performance – all in a compact PowerPAK® SO-8S BWL package.
Whether you’re building DC/DC converters, motor drives, battery management systems, or industrial controls, the SiRS5700DP delivers the efficiency and reliability you need.
Key features
- Very low RDS x Qg figure-of-merit (FOM)
- TrenchFET® Gen V power MOSFET
- Leadership RDS(on) minimizes power loss from conduction
- Operating temperature range: -55°C to +150°C
Applications
- Synchronous rectification
- DC/DC converters
- OR-ing and hot swap switch
- Power supplies
- Motor drive control
- Battery management
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