Vishay SiC Diode VS-3C01EJ12, VS-3C02EJ07, VS-3C02EJ12
Gen 3 650 V and 1200 V SiC Schottky diodes in the SlimSMA HV offer low capacitive charge, high creepage distance
Featuring a minimum creepage distance of 3.2 mm for improved electrical isolation, Vishay’s new Gen 3 650 V and 1200 V SiC Schottky diodes in the SlimSMA HV (DO-221AC) package offer low capacitive charge and temperature-invariant switching behavior to increase efficiency in high speed power designs.
Key features
- Minimum creepage distance of 3.2 mm provides improved electrical isolation for high voltage applications
- Low capacitive charge down to 7.2 nC
- Low forward voltage drop down to 1.30 V
- Offered in the low profile SlimSMA HV (DO-221AC) package
Applications
- PFC diodes for DC/DC and AC/DC converters in server power supplies
- Energy generation and storage systems
- Industrial drives and tools
- X-ray generators
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