Vishay MXP120A045SE - MaxSiC® 1200 V N-Channel SiC MOSFET
This device is part of Vishay’s MaxSiC® series, designed for high-efficiency and robust reliability in demanding power electronics systems
Engineered for next-generation efficiency, this device combines ultra-low RDS(on) with lightning-fast switching to minimize losses and maximize performance in high-voltage applications. Its robust silicon carbide technology ensures superior thermal stability and reliability, even under extreme conditions.
With a compact TO-263 7L package, the MXP120A045SE delivers high current capability and exceptional ruggedness, making it the ideal choice for EV chargers, solar inverters, industrial drives, and advanced power conversion systems.
Key features
- High voltage capability – 1200 V rating for demanding power conversion applications
- Low On-Resistance – RDS(on) of only 45 mΩ (typical), reducing conduction losses
- Fast switching performance – Optimized for high efficiency and reduced switching losses
- Robust and reliable – Short-circuit withstand time of 3 µs and wide operating temperature range (-55°C to +150°C)
Applications
- Electric Vehicle (EV) chargers – High-efficiency power conversion
- Solar inverters – Reliable performance in renewable energy systems
- Industrial motor drives – Robust control for high-power motors
- DC/DC Converters – Efficient voltage regulation in energy storage
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