Toshiba TW092V65C

Toshiba’s 3rd-gen 650V SiC MOSFETs in compact DFN8x8 packages deliver high efficiency and power density for industrial systems. Their low switching losses, low thermal coefficient of R_DS(on), integrated Schottky-Barrier-Diode enable simpler, smaller designs. Kelvin Source connection allows for better Gate control in high-speed switching. Ideal for SMPS, EV chargers, UPS, and PV inverters, they support fast switching and automated assembly, helping engineers push the limits of efficiency.

Key features

• Small DFN8x8 package: 90% smaller than TO-247 
• Low switching losses: Improves efficiency and reduces heat
• High power density: Enables smaller, more compact systems
• Surface-mount design: Supports automated assembly
• Kelvin source pin: Enhances high-speed switching performance
• Low R_DS(ON) x Q_gd FoM: Optimized for high-efficiency designs
• Supports miniaturization: Ideal for space-constrained layouts

Applications

• Switched-mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)
• Photovoltaic (PV) inverters
• Industrial power converters
• Compact high-voltage systems
• Integrated industrial drives
• Robotics drives