Toshiba TW048U65C Silicon Carbide MOSFET, 650 V
Compact TOLL package, high efficiency for industrial power systems
The Toshiba TW048U65C 650V SiC MOSFET in TOLL package for high efficiency and power density. Kelvin connection and 3rd-gen SiC allows reduction of switching losses by 55% (Eon) and 25% (Eoff). Ideal for SMPS, UPS, EV chargers, and PV inverters.
TW027U65C: SiC MOSFET with ultra-low RDS(on) for maximum efficiency in compact designs.
TW083U65C: as SiC MOSFET with option for higher RDS(on) needs.
Key features
- 650V VDSS: Ideal for high-voltage industrial systems
- RDS(ON) options: 27mOhm, 48mOhm, 83mOhm
- TOLL package: 80% smaller for space-saving designs
- Kelvin connection: Minimizes influence of parasitic inductance for, enabling fast switching. Reduced switching losses 55% lower Eon & 25% lower Eoff.
- Wide VGSS (-10V to 25V): Flexible gate drive compatibility. VGS(ON)=18V, VGS(OFF) =0V. No need for negative voltage.
- Optimized RDS(on): Stable performance across temperatures
- Low Qgd: Improves efficiency and reduces power loss
- High ID rating: Robust operation under heavy loads
Applications
- SMPS for servers, data centers, and telecom equipment
- UPS systems for industrial and commercial use
- EV charging stations for fast and efficient power delivery
- PV inverter power conditioners for renewable energy
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