Toshiba TRSxxHxxxH Series
1200V SiC Schottky barrier diodes
The TRSxxHxxxH series expands Toshiba’s SiC diode portfolio with a 40A diode in a 2-pin TO-247-2L package, enhancing efficiency in PV inverters, EV chargers, and power supplies. Advanced technology reduces energy loss under high current, with low capacitive charge and reverse current for better efficiency and cooling. Ideal for high-performance applications, these diodes operate reliably at up to +175°C, improving system efficiency and thermal design.
Key features
- Enhanced JBS structure: Low forward voltage (VF) of 1.27V (typ.) reduces power losses
- Thermal efficiency: Maximum case temperature of +175°C simplifies thermal design
- Low capacitive charge: At 1200V, TRS40H120H offers 220nC total capacitive charge, improving efficiency
- Minimal Leakage current: Reverse current (IR) of 3,6µA at 1200V enhances efficiency and reliability
Applications
- Photovoltaic (PV) inverters
- Electric Vehicle (EV) charging stations
- Switching power supplies
- UPS
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