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Toshiba TPM7R10CQ5 Power MOSFET, N Channel, 150 V

Toshiba’s TPM7R10CQ5 150V MOSFET with high-speed body diode in new powerful compact SOP Advance(E) package

Toshiba TPM7R10CQ5 Power MOSFET, N Channel, 150 V product image

Toshiba’s TPM7R10CQ5 150V MOSFET in the SOP Advance(E) package delivers lower on-resistance and thermal resistance for higher efficiency.

Excellent switching capability and high speed body diode, making it ideal for compact power supplies in data centres, base stations, and industrial systems.

 

Key features

  • SOP Advance(E) package: Reduces resistance and improves heat dissipation
  • High-speed body diode: trr=45nC (typ) Enhances efficiency in synchronous rectification
  • Lower RDS(ON) and Rth(ch-c): Reduces conduction and thermal losses
  • Compact footprint: Enables space-saving, high-density layouts
  • Supports high current, Id=120A(Tc=25°C) : Ideal for demanding power systems
  • SPICE models available: Speeds up simulation and design validation

 

Applications

  • Switched-mode power supplies (SMPS)
  • Data centre power infrastructure
  • Communication base stations
  • Industrial power conversion systems
  • High-efficiency synchronous rectifiers

 

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