Toshiba TK024Z60Z1 Power MOSFET
N Channel, 600 V Toshiba’s DTMOSVI 600V MOSFETs cut switching loss and boost efficiency for critical power systems
Toshiba’s DTMOSVI 600V MOSFETs deliver up to 52% lower FOM Qgd x RDS(ON) and 13% reduced RDS(ON) for high-efficiency SMPS for servers, Telecom and PV inverters. The innovative 4-pin TO-247-4L(X) package ensures faster switching and reduced inductance. Advanced SPICE models support design flexibility.
TK024Z60Z1 offers 20mΩ RDS(ON) typ. and 37nC Qgd for superior efficiency and speed. Ideal for demanding power applications.
Further RDS(ON) values up to 105mΩ (typ.) are available in same Package.
Key features
- 20mΩ RDS(ON): Lower conduction loss for high efficiency
- 37nC Qgd: Faster switching, reduced energy waste
- 4-pin TO-247-4L(X): Kelvin source minimizes influence of parasitic inductance
- High creepage distance: Safer high-voltage operation
- SPICE models: Accurate design and simulation support
Applications
- Data center servers
- Industrial SMPS
- PV power conditioners
- UPS systems
- High-efficiency inverters
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