Toshiba TK024N60Z1 600V N-Channel power MOSFET
Toshiba's 600V MOSFET boosts power supply efficiency with ultra-low RDS(ON), fast switching, and high heat dissipation
Toshiba’s TK024N60Z1 N-channel MOSFET delivers top efficiency for power supplies with ultra-low 0.024Ω RDS(ON), reduced losses, and excellent heat dissipation via TO-247 package. Its advanced DTMOSVI 600V super junction design cuts conduction and switching losses-ideal for data centers, industrial SMPS, and solar inverters.
Key features
- Ultra-low RDS(ON) max of 0.024Ω: Minimizes conduction losses for higher efficiency
- DTMOSVI 600V super junction technology: Figure of Merit: RDS(ON) * Q(GD) is reduced ~ 52% vs. previous Generation
- TO-247 package: Excellent thermal performance for reliable operation
- Optimized gate design: 13% lower RDS(ON) per unit area for compact, efficient designs
- SPICE models available: Speeds up design and simulation for faster time-to-market
Applications
- Data center servers: Efficient power delivery with reduced heat
- Industrial SMPS: Compact and high-performance power supply
- Solar inverters: Reliable and energy-efficient integration
- High-efficiency circuits in demanding environments
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