STMicroelectronics STPSC4G065UF→STPSC4G065UF
650 V, 4A power Schottky High Surge silicon carbide diode
The SiC diode, available in SMB-Flat, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Thanks to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Based on technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions while bringing robustness to the design. Its high forward surge capability ensures a good robustness during transient phases.
Key features
- None or negligible reverse recovery charge in application current range
- Switching behaviour independent of temperature
- High forward surge capability
- Operating Tj from -55 °C to +175 °C
- ECOPACK2 compliant component
Applications
- SMPS in telecom power
- Datacenter
- Industrial equipment
- Solar converter
- Air conditioning equipment
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