STMicroelectronics STPSC20G065-Y→STPSC20G065WLY
Automotive 650 V, 20A high surge silicon carbide power Schottky diode
The SiC diode STPSC20G065-Y, available in DO-247 LL with long leads and TO-220AC, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design.
Key features
- AEC-Q101 qualified and PPAP capable
- No reverse recovery charge in application current range
- Switching behavior independent of temperature
- High forward surge current capability
- Operating Tj from -55 °C to 175 °C
- ECOPACK2 compliant component
Applications
- On board charger (OBC)
- On-board DC/DC converters
- EV Charging station
- Rotor H-Bridge of wound-rotor synchronous motor (WRSM)
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