STMicroelectronics STH345N6F7-2→STH345N6F7-2
N-channel 60 V, 1.2 mOhm max., 397 A STripFET F7 Power MOSFET in an H2PAK-2 package
This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Key features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
Applications
- Telecom
- Computing systems
- Solar inverter
- Industrial automation
- Automotive applications
Do you have a Question?
Contact EBV
If you need any assistance, please click below to find your closest EBV sales office.
