Renesas TP65H030G4PWS
650V 30mΩ SuperGaN FET in TO-247
The TP65H030G4PWS, 650V, 30mΩ Gallium Nitride (GaN) FET in a TO-247 package is a normally-off device using Renesas' Gen IV plus SuperGaN® platform. It combines a high-voltage GaN High Electron Mobility Transistor (HEMT) with an optimized low voltage silicon MOSFET to offer superior performance, standard drive, ease of adoption, and enhanced reliability.
Key features
- On-state resistance: RDSON typ = 30mΩ
- Output charge: Qoss = 127nC
- Gate charge: Qg = 22nC
- Output Capacitances: Coss = 127pF, Co(er) = 183pF, Co(tr) = 339pF
- Available in industry-standard TOLL, TOLT (top side cooled) and TO-247 packages
Applications
- Infrastructure (datacenter server) power supply
- BESS (energy storage)
- E-mobility charging Infrastructure
- UPS
- Solar Inverters
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