onsemi NXH010P120M3F1PTG
Silicon Carbide (SiC) module - EliteSiC, 10 mohm SiC M3S MOSFET, 1200 V, 2-PACK half bridge topology, F1 package
The NXH010P120M3F1PTG is a power module containing 10 mohm / 1200 V SiC MOSFET half-bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.
Key features
- Excellent FOM [ = Rdson * Eoss ]
- 15V to 18V gate drive
- 10 mohm / 1200 V M3S SiC MOSFET HalfBridge
- These devices are PbFree, Halide free and are RoHS compliant
Applications
- DC-AC, DC-DC, and AC-DC conversion
- UPS
- Energy storage systems
- Electric vehicle charging stations
- Solar inverters
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