onsemi Silicon Carbide (SiC) MOSFETs - NTBL023N065M3S
Silicon Carbide (SiC) MOSFET - EliteSiC, 23 mohm, 650 V, M3S, TOLL package
The new family of 650V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive. The TOLL package offers improved thermal performance and excellent switching performance thanks to Kelvin Source configuration and lower parasitic source inductance. TOLL offers Moisture Sensitivity Level 1 (MSL 1).
Key features
- Max Junction temperature 175°C
- Leadless thin SMD package
- Kelvin source configuration
- Excellent FOM [ = RDS(on) * Eoss ]
- Ultra low gate charge (QG(tot) = 69 nC)
- Typ. RDS(on) = 23 m at Vgs = 18V
- High speed switching with low capacitance (Coss = 152 pF)
- 15V to 18V Gate drive
- Zero reverse recovery current of body diode
- 650V rated
Applications
- Telecom power
- EV Charger
- Solar / UPS
- Server power
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