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Nexperia Power MOSFET with Enhanced Dynamic Current Sharing in LFPAK88

Eliminate the need for complex and expensive device threshold voltage matching

Nexperia Power MOSFET with Enhanced Dynamic Current Sharing in LFPAK88 product image

Introducing the latest additions to its ever-expanding portfolio of application-specific MOSFETs (ASFETs), whose features have been tuned to meet the exacting requirements of specific end applications. The 80 V PSMN1R9-80SSJ and 100 V PSMN2R3-100SSJ switches have been designed to provide enhanced dynamic current sharing in high-power 48 V applications that require the use of several closely matched MOSFETs connected in parallel. These include motor drive in electric vehicles like forklifts, e-scooters and mobility devices, as well as high-power industrial motors.

 

Key features

  • Removes the need for VGS(th) matching
  • Low ΔID enhances current sharing in parallel applications
  • Reduced VGS(th) spread
  • Low RDSon
  • 255 A continuous ID Max
  • Avalanche rated, 100% tested
  • Compact and Reliable 8x8 LFPAK88 package, qualified to 175 °C

 

Applications

  • Applications using MOSFETs in parallel
  • Applications utilizing MOSFETs with matched VGS(th)
  • High-power motor control

 

 

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