Nexperia 650 V trench field-stop Discrete IGBT
Robust and cost-effective high-voltage solutions
Discrete IGBTs (Insulated Gate Bipolar Transistors) are a staple component of medium and high-voltage applications. With growing demand for robust, efficient and cost-effective power solutions across an increasing range of applications, Nexperia’s carrier stored trench-gate advanced field-stop (FS) IGBT portfolio meets these industry demands.
Initially consisting of 650 V devices, Nexperia IGBTs deliver high ruggedness reliability and enhanced inverter power density for industrial applications. That is ideal for more traditional power applications such as Heating, Ventilation, and Air Conditioning (HVAC) systems as well as electric welding and induction heating. But also for power conversion and motor drives in current system including renewable energy (photovoltaic (PV) strings, heat pumps), EV-chargers and 5 – 20 kW (20 kHz) industrial servo motors for robotics.
Key features
- Ultra low diode Vf
- Ultra low IGBT turn off loss
- Trade off for total power loss
- High ruggedness reliability
- Stable and tight parameters for easy parallel operation
- Maximum junction temperature of 175 °C
- 5 μs short circuit capability (For M3)
Applications
- Industrial motor drives: robotics, elevators, operating grippers
- Power inverters: UPS, Photovoltaic strings, EV-charging
- Induction heating, welding
- Power Factor Correction (PFC)
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