Nexperia 40 V bi-directional Gallium Nitride (GaN) FET
Unconventional innovative GaN solution in BMS
Nexperia’s bi-directional GaN FETs are ideal for power applications where voltage blocking and current conduction are important functions. For example, they deliver a superior solution when replacing conventional back-to-back silicon MOSFETs in Battery Management Systems (BMS). Guaranteeing low conduction losses and ultra-high switching speed capability as well as delivering significant space savings (smallest footprint). They also bring these benefits when applied as over-voltage protection (OVP), switching circuits for multiple power sources and high side load switches in bidirectional converters.
Key features
- Enhancement mode - normally-off power switch
- Bi-directional device
- Ultra high switching speed capability
- Ultra-low on-state resistance
- RoHS, Pb-free, REACH-compliant
- High efficiency and high power density
- Package options:
- Wafer Level Chip-Scale Package (WLCSP) 1.2 mm x 1.7 mm
- Wafer Level Chip-Scale Package (WLCSP) 1.7 mm x 1.7 mm
- Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm
- Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
Applications
- High-side load switch
- OVP protection in smart phone USB port
- DC-to-DC converters
- Power switch circuits
- Stand-by power system
Low voltage e-mode GaN FETs
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