Nexperia 1200 V SiC Schottky Diodes
Enable high efficiency power conversion in energy-intensive AI server farms and solar inverter applications
Nexperia today announced the addition of two 1200 V 20 A silicon carbide (SiC) Schottky diodes to its continuously expanding portfolio of power electronics components. The PSC20120J and PSC20120L have been designed to address the demand for ultra-low power loss rectifiers which enable high-efficiency energy conversion in industrial applications. As such they are ideally suited for the power supply units (PSUs) in power-intensive artificial intelligence (AI) server infrastructure, telecommunications equipment and solar inverter applications.
Packaging options: Real-2-Pin D2PAK R2P (TO-263-2) SMD; Real-2-Pin TO247 R2P (TO-247-2) through-hole
Key features
- Zero forward and reverse recovery
- Temperature independent fast and smooth switching performance
- Outstanding figure of merit (Qc x VF)
- High IFSM capability
- High power density
- Reduced system costs
- System miniaturization
- Reduced EMI
Applications
- Switch Mode Power Supply (SMPS)
- AC-DC and DC-DC converter
- Battery charging infrastructure
- Server and telecom power supply
- Uninterruptible Power Supply (UPS)
- Photovoltaic inverters
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