Nexperia 1200V SiC MOSFET in X.PAK

Nexperia introduces a range of highly efficient and robust industrial grade 1200 V silicon carbide (SiC) MOSFETs with industry leading temperature stability in innovative surface-mount (SMD) top-side cooled packaging technology called X.PAK. This package, with its compact form factor of 14 mm x 18.5 mm, combines the assembly benefits of SMD with the cooling efficiency of through-hole technology, ensuring optimal heat dissipation. This release addresses the growing demand from a broad range of high power (industrial) applications for discrete SiC MOSFETs that harness the advantages of top-side cooling to deliver exceptional thermal performance. The new X.PAK packaged devices deliver class-leading figures-of-merit (FoM) known from Nexperia SiC MOSFETs, with R_DS(on) being a particularly critical parameter due to its impact on conduction power losses. However, many manufacturers concentrate on the nominal value of this parameter and neglect the fact that it can increase by more than 100% as device operating temperatures rise, resulting in significant conduction losses. Nexperia SiC MOSFETs, on the other hand, offer industry-leading temperature stability, with the nominal value of R_DS(on) increasing by only 38% over an operating temperature range from 25 °C to 175 °C.

Key features

• Excellent R_DS(on) temperature stability
• Very low switching losses
• Fast reverse recovery
• Fast switching speed
• Temperature independent turn-off switching losses
• Very fast and robust intrinsic body diode
• Faster commutation and improved switching due to the additional Kelvin source pin

Applications

• E-vehicle charging infrastructure
• Photovoltaic inverters
• Switch mode power supply
• Uninterruptable power supply
• Motor drives