Nexperia 1200 V Automotive SiC MOSFETs in D2PAK-7
1200 V, N-channel SiC MOSFET for automotive applications
Nexperia announced a range of highly efficient and robust automotive qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40 and 60 mΩ. These devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q), which deliver industry-leading figures-of-merit (FoM), were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction inverters in electric vehicles (EV) as well as for DC-DC converters, heating ventilation and air-conditioning systems (HVAC). These switches are housed in the increasingly popular surface mounted D2PAK-7 package which is more suitable for automated assembly operations than through-hole devices.
Key features
- Excellent RDSon temperature stability
- Very low switching losses
- Fast reverse recovery
- Fast switching speed
- Temperature independent turn-off switching losses
- Very fast and robust intrinsic body diode
- Faster commutation and improved switching due to the additional Kelvin source pin
Applications
- E-vehicle charging infrastructure
- Photovoltaic inverters
- Switch mode power supply
- OBC and traction inverters in EVs
- Uninterruptable power supply
- Motor drives
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