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Infineon IPM018N10NM5LF2

OptiMOS™ 5 single N-channel Linear FET 2 100 V, 1.8 mΩ, 176 A in 8 mm x 8 mm footprint

Infineon IPM018N10NM5LF2 product image

IPM018N10NM5LF2 is Infineon’s best-in-class OptiMOS™ 5 Linear FET 2 100 V in the new 8x8 mTOLG, offering the industry’s lowest RDS(on) and wide SOA at 25˚C.This is a JEDEC listed package, compatible with other 8x8 mm2 gullwing package MOSFETs, i.e. LFPAK88 type. The combination of the OptiMOS™ 5 Linear FET 2 technology and the mTOLG package, is designed to provide highest power density for inrush current protection applications such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).

 

Key features

  • 8 mm x 8 mm footprint
  • Wide safe operating area (SOA)
  • Ultra low on-resistance
  • Lower leakage current
  • Optimized transfer characteristic

 

Applications

  • Battery Management Systems (BMS)
  • Server Power supply Units (PSU)
  • Telecommunication infrastructure
  • Protection applications such as hot-swap, e-fuse, battery protection

 

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Related documents

    
  • IPM018N10NM5LF2 - Datasheet
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