Infineon EDF5215F/G
Fast, robust, dual-channel, high side isolated gate driver with accurate and stable timing and high current output EDF5215F/G
Designed to drive low-side and high-side MOSFETs, a strong output stage, together with a low part-to-part skew and fast signal propagation makes these products ideal for use in fast-switching power systems. The outputs are matched with a maximum 4 ns propagation delay enabling the use of lower dead-time in half-bridge and perfect synchronization in diagonal driving.
Key features
- 250 V high and low-side gate driver
- -250 V negative HS transient immunity
- 100 V/ns dV/dt robustness
- 5 A / 9 A source / sink capability
- +9 ns / -5 ns delay accuracy
- 4 ns max delay matching
- 1.2 V output clamping threshold in UVLO
- <2 μs fast start-up time
Applications
- Server and telecom DC-DC converter
- Synchronous rectification for SMPS
- Motor drives and power tools
- Low-speed electric vehicles (LSEV)
- Solar optimizers and micro-inverters
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