Infineon CoolSiC™ MOSFET discrete 650 V G2
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 package portfolio has been expanded by 26 mΩ and 33 mΩ
The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 package portfolio has been expanded by 26 mΩ and 33 mΩ and now offers a more granular RDS(on) range from 20 mΩ up to 60 mΩ. The Thin-TOLL package is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and improves the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density
Key features
- Excellent figures of merit (FOMs)
- Best in class RDS(on)
- High robustness and overall quality
- Flexible driving voltage range
- Support for unipolar driving (VGSoff=0)
- Pin to pin compatible with all 8x8 FETs
- Improved package interconnect with .XT
- 4x improvement in TCoB
Applications
- Complete system solutions for smart TVs
- Heating ventilation and air conditioning (HVAC)
- Home appliances
- Microinverter solutions
- Power conversion
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