Infineon CoolSiC™ MOSFET 650 V Generation 2
CoolSiC™ MOSFET 650 V Generation 2 in Q-DPAK top-side cooling and TOLL bottom-side cooling package
The CoolSiC™ G2 builds on the strong Generation 1 of trench SiC MOSFETs, offering improved performance, more flexibility and more robustness to secure the system price-performance leap, reaching top levels in terms of efficiency, high frequency switching and reliability in both hard and soft switching topologies. The new package offering of the CoolSiC™ G2 family adds the advantages of top-side cooling (Q-DPAK) and bottom-side cooling (TOLL), combining the thermal capability of the TO devices with the compactness and cheaper assembly of the SMD devices.
Key features
- Excellent figures-of-merit (FOMs)
- Best in class RDS(on)
- High robustness and overall quality
- Support for unipolar driving (VGS,off=0)
- Flexible driving voltage range
- Lower thermal resistance
- Improved package interconnect with .XT
- Top- and bottom side cooling
- TOLL: Pin-to-pin compatible with all 8 x 8 FETs
Applications
- 1-phase string inverter solutions
- Energy storage systems
- EV charging
- Power conversion
- Solid-state circuit breaker
- AI SMPS, Telecom SMPS, Edge SMPS, Server SMPS, TV SMPS
- Humanoid charging
- Battery charging
- LEV
- eBike charging
- Drive
- Residential aircon
- HVAC
- SSR
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