Infineon CoolGaN™ transistors 650 V G5
The new generation of 650 V GaN power transistors allows for increased efficiency at high-frequency operation
The new generation of 650 V GaN power transistors allows for increased efficiency at high-frequency operation and meets the highest quality standards, enabling highly reliable designs with superior efficiency. Available in top-side cooled TOLT and DSO as well as the bottom-side cooled ThinPAK 5x6 package, this new family of GaN transistors is designed for optimal power dissipation and slim form factors in various industrial and consumer applications.
Key features
- 650 V e-mode power transistor
- Ultrafast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- Low dynamic RDS(on)
- High ESD robustness: 2 kV HBM - 1 kV CDM
- Top-side cooled package or bottom-side cooled package
- JEDEC qualified (JESD47, JESD22)
Applications
- AC-DC auxiliary power supplies
- AC-DC power conversion for telecom infrastructure
- Consumer electronics
- Datacenter and computing solutions
- EV charging
- Industrial power supplies
- Home appliances
- Photovoltaic
- Power conversion
- USB-C adapters and chargers
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