Vishay SIHR080N60E-T1-GE3

To provide higher efficiency and power density, Vishay introduces its first fourth-generation 600 V E Series power MOSFET in the new PowerPAK^® 8 x 8LR package. Compared to previous-generation devices, Vishay´s n-channel SiHR080N60E slashes on-resistance by 27 % and resistance times gate charge, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications, by 60 %, while providing higher current in a smaller footprint than devices in the D2PAK package. The SiHR080N60E is built on Vishay’s latest energy-efficient E Series superjunction technology. With the SiHR080N60E and other devices in the fourth-generation 600 V E Series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture - power factor correction (PFC) and subsequent DC/DC converter blocks.

 
Key features

• Low typical on-resistance of 0.074 Ω at 10 V
• Ultra low gate charge down to 42 nC
• Industry-low 3.1 Ω*nC on-resistance times gate charge
• Designed to withstand overvoltage transients in avalanche mode
• Compact top-side cooling PowerPAK 8 x 8LR package

Applications

• Power factor correction (PFC) and subsequent DC/DC converter blocks in servers
• UPS
• High intensity discharge (HID) lamps and fluorescent ballast lighting