Toshiba 650V 95mOhm high speed diode MOSFET
Superjunction MOSFET with high-speed body diode that help to improve efficiency of power supplies and motor inverters
TK095N65Z5 is one of the first high-speed diode (HSD) type products in the latest generation DTMOS VI series. It is housed in a TO-247 package. Compared to the standard DTMOS VI products, the TK095N65Z5 achieve a 65% reduction in reverse recovery time (trr) with only 115ns. Also the TK095N65Z5 has reduced reverse recovery charge (Qrr) by 88%. These significant improvements reduce power losses of switching equipment, which helps efficiency.
Key features
- Fast reverse recovery time: trr = 115 ns (typ.)
- Low drain-source on-resistance: RDS(ON) = 0.079Ω (typ.)
- High-speed switching properties with lower capacitance.
- Enhancement mode: Vth = 3.5 to 4.5 V (VDS = 10 V, ID = 1.27 mA)
Applications
- Bridge circuit of power supply
- PV inverter
- UPS
- EV charging station
- Motor inverter
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