Toshiba TCWA1225G

RF switch housed in a tiny Wafer-level Chip Scale Package (WCSP) measuring just 1.9mm x 1.9mm – giving a footprint around 10% smaller than similar devices. All-important pads including RF terminals, power and control are placed on the periphery of the device to simplify PCB layout. The high performance RF SPDT switch provides an input peak input power 46dBm (@8dB PAR). This has been achieved by adopting Toshiba’s original CMOS process and optimising the internal switching circuitry. The CMOS process reduces insertion loss avoiding lowering transmit power and receiver sensitivity.

Key features

• Input peak power of 46 dBm (@ 8dB PAR)
• Insertion loss of 0.6 dB (typ. @ 5GHz)
• WCSP package measuring 1.9mm x 1.9mm
• Operating temperature -40°C to 95°C

Applications

• 5G telecommunications base stations
• Industrial equipment
• Repeaters
• Consumer equipment
• Transceivers