Toshiba Electronics Europe XPQR8308QB and XPQ1R00AQB

The 80V XPQR8308QB and 100V XPQ1R00AQB are based on Toshiba's U-MOS-X-H process. This results in low on-resistances, with the XPQR8308QB measuring less than 0.83mΩ, while the XPQ1R00AQB does not exceed 1.03mΩ. The devices are designed for continuous ID values ​​of 350A (XPQR8308QB) and 300A (XPQ1R00AQB) with pulsed values ​​of 1050A and 900A, respectively.

The L-TOGL™ package features a thick copper clip-based leadframe structure that thermally and electrically connects the MOSFET chip to the package leads. This reduces package resistance by approximately 70% and channel-to-case thermal impedance by 50% compared to the TO-220SM(W) package.

Key features

• Resistance optimized 10x12mm SMD package
• TOLL compatible with gullwing pins
• R_DS(on)max: 80V XPQR8308QB is 0.83mΩ, 100V XPQ1R00AQB is 1.03mΩ
• AEC-Q101 qualified

Additional features

Advantages

• Gull-wing package for stress relief and good reliability
• High current operation can be supported
• XPQR8308QB rated for 350A ID, XPQ1R00AQB rated for 300A ID
• V_th grouping is supported for parallel use (ΔV_th=0.4V)
   

Benefits

• Total power losses can be significantly reduced
• Smaller, more compact designs could be achieved
• L-TOGL(TM) package footprint compatible to TOLL
• Gullwing Pins for better reliability compared to Leadless packages
• Narrow V_th sorting option for improved parallel operation

Applications

• 48V applications
• Motor drivers
• DC-DC converters
• Load switch